An epitaxial wafer is a wafer of semiconducting component made by epitaxial growth for use in photonics, spintronics, photovoltaics, microelectronics. The epi layer may be the same material as the substrate, commonly monocrystalline silicon, or it may be a more alien material with circumstantial enviable trait. GaN epitaxial wafer delivers modernization at the gadget level to accost the preconditions of next generation 5G radiofrequency (RF) cellular networks, customer power supplies and exclusive sensor systems.
An epitaxial wafer also acknowledged as, epi wafer, is a wafer of semiconductive component manufactured by epitaxial growth (epitaxy) for operation in photonics, microelectronics, spintronics, or photovoltaic. The epitaxial layers subsist of discrete amalgamations such as gallium nitride (GaN), gallium arsenide (GaAs), or some sequence of the components gallium, nitrogen, indium, phosphorus, aluminum or arsenic. High electron movability, low changing losses, and lesser arrangement imbalances are some of the crucial conveniences of GaN Substrate, which are resulting in its maintenance in industries such as power electronics and optoelectronics.
Key competitors in this region are concentrated on displaying advanced devices to adhere to broadening obligations and demands of purchasers. For precedent, in June 2019, Samsung declared the launch of The Wall Luxury GaN micro-LED display configurable from 73” in 2K to 292” in 8K. Expanding appeal for LEDs from discrete industries such as customer electronics & automotive and growing renewable energy generation in the Asia Pacific, China, India, and south Korea region.
Global GaN Epitaxial Wafers Market Value Share Analysis, by Geography (2022)
The report titled “Global GaN Epitaxial Wafers Market - Global Market Share, Trends, Analysis and Forecasts, 2023-2032” wherein 2021 is historic period, 2022 is the base year, and 2023 to 2032 is forecast period. Additionally, the study takes into consideration the competitive landscape, wherein the report would provide company overview and market outlook for leading players in the Global GaN Epitaxial Wafers Market.
Furthermore, the report would reflect the key developments, global & regional sales network, business strategies, research & development activities, employee strength, and key executive, for all the major players operating in the market.
The global GaN epitaxial wafers market is segmented based on method type, Application type, Wafer size type and geography. Based on method type, it is bifurcated into MOCVD Method, MBE Method. Based on Wafer size type, it is segmented into 2-Inch Wafer, 4-Inch Wafer, 8-Inch, Above 8- inch Wafer. Based on application type is categorized into Electric Vehicles, 5G Communications, High-Speed Rails, Radars, Robotics, Others. Based on geography is segmented into North America, Europe, Asia Pacific, Middle East & Africa, and South America. North America is sub-segmented into the United States, Canada and Rest of North America. Europe is sub-segmented into Germany, United Kingdom, Italy, France, Spain, and Rest of Europe. Asia Pacific is sub-segmented into China, Japan, India, Australia, and Rest of Asia Pacific. Middle East & Africa is sub-segmented into Saudi Arabia, UAE, South Africa and Rest of Middle East & Africa. South America is sub-segmented into Brazil and Rest of South America.
The research provides in-depth analysis of prominent players holding majority share of the global market with a focus on all operating business segment and would identify the segment of the company focusing on Global GaN Epitaxial Wafers Market. Further, market share of prominent companies in the global GaN epitaxial wafers market would also be estimated.
The study takes into consideration the key competitive information such as business strategy, product portfolio, key development, swot analysis, and research and development focus of all the GaN epitaxial wafers companies. The global GaN epitaxial wafers market study would take into consideration the participants engaged throughout the supply chain and value chain of the market, along with their contribution.
Product portfolio would focus on all the products under the GaN epitaxial wafers business segment of the company. Similarly, the recent development section would focus on the latest developments of company such as strategic alliances and partnerships, merger and acquisition, new product launched and geographic expansion in the global GaN epitaxial wafers market.
The key players of the global GaN epitaxial wafers market are Mitsubishi Chemical Corporation, Nitride Semiconductors Co.,Ltd, GLC Semiconductor Group, EpiGaN, POWDEC K.K., SCIOCS, Atecom Technology Co., Ltd, Homray Material Technology, IGSS GaN, Dongguan Sino Crystal Semiconductor Co., Ltd, Cor Energy Semiconductor Co. Ltd, Ceramic forum Co., Ltd, Air Water Inc, Xiamen Power way Advanced Material Co. Ltd.
Global GaN Epitaxial Wafers Market Key Segments:
By Method Type
By Wafer size Type
By Application Type
By Region
The base year considered in Global GaN Epitaxial Wafers market report is 2022
Based on applicaltions, the Global GaN Epitaxial Wafers market is segmented into Electric Vehicles, 5G Communications, High-Speed Rails, Radars, Robotics and Others.
The major active players are Mitsubishi Chemical Corporation, Nitride Semiconductors Co.,Ltd, GLC Semiconductor Group, EpiGaN, POWDEC K.K., SCIOCS, Atecom Technology Co., Ltd, Homray Material Technology, IGSS GaN, Dongguan Sino Crystal Semiconductor Co., Ltd, Cor Energy Semiconductor Co. Ltd, Ceramic forum Co., Ltd, Air Water Inc, Xiamen Power way Advanced Material Co. Ltd..
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